Semiconductor Doping Services
We provide semiconductor doping services to support device development, prototyping, and specialty manufacturing. Doping controls carrier type and concentration (n-type / p-type) to form functional regions such as ohmic contacts, junctions, wells, and isolation structures.
Our team supports multiple doping routes—including ion implantation and thermal diffusion—with optional annealing/activation and basic electrical characterization to help you reach target sheet resistance and junction depth.
Service Options
1) Ion Implantation (most common for precision profiles)
- Controlled dose and energy for repeatable junction depth
- Suitable for masked/defined regions (with customer-provided masks or process flow)
- Typical use: contacts, junctions, channel engineering, isolation
2) Thermal Diffusion (cost-effective for some structures)
- Suitable for larger-area doping and simpler profiles
- Often paired with drive-in/oxidation steps (process-dependent)
3) Post-Doping Activation / Annealing
- RTA / furnace anneal options (material/process dependent)
- Activation and damage recovery are critical for wide-bandgap materials
4) In-situ / process-guided doping (project-based)
- For customers needing custom development support rather than a single step
Optional Characterization (availability varies)
- Sheet resistance (Rs)
- Hall measurement (carrier type/concentration/mobility)
- Thickness / mapping / uniformity checks
- SIMS depth profiling (typically via partner labs)
What We Need for a Quote (RFQ Checklist)
- Material + wafer size (e.g., 2", 4", 6")
- Target doping type (n/p) and dopant preference (if any)
- Target sheet resistance or active concentration
- Desired junction depth / profile (if known)
- Masking needs (blanket vs patterned; mask stack details)
- Quantity and timeline
- Any temperature limits / downstream process constraints