Sputtering System
Our sputtering system is engineered for advanced academic research and semiconductor manufacturing environments. Universities benefit from a user-friendly interface, safe operating design, and modular chamber configuration ideal for teaching laboratories, senior design projects, and graduate research.
Semiconductor and industrial R&D fabs gain stable process repeatability, high-density plasma generation, multi-target switching, and optional recipe-based automation for rapid film optimization. The system supports high-purity metal films, oxide/nitride dielectrics, superconducting layers, and functional coatings required in microelectronics, photonics, and quantum device development.
With optional substrate heating, reactive sputtering gas control, and multi-power-source architecture, it offers the precision, flexibility, and reliability needed for next-generation device fabrication.
Technical Spec Sheet Table
| Category | Specification |
|---|---|
| Deposition Method | DC / RF sputtering, magnetron sputtering |
| Target Materials | Metals, oxides, nitrides, alloys |
| Target Size | 1"–4" (custom sizes available) |
| Target Configuration | Single, dual, or multi-cathode |
| Base Vacuum | 10⁻⁵ – 10⁻⁷ Torr (turbo + backing pump) |
| Working Pressure | 1–20 mTorr |
| Gases Supported | Ar, O₂, N₂, reactive sputtering |
| Mass Flow Control (MFC) | 1–3 channel digital MFC (optional closed-loop) |
| Substrate Size | Up to 4" or 6" wafer; custom fixtures |
| Substrate Heating | RT – 600°C (optional up to 800°C) |
| Substrate Motion | Rotation 0–20 rpm, tilt option |
| Power Supplies | DC 100–1000 W, RF 100–600 W |
| Film Thickness Monitor | QCM optional |
| Safety Features | Overload protection, interlocks, water cooling |
| Applications | Semiconductors, optics, sensors, MEMS, superconductors |
Frequently Asked Questions (FAQ)
1. What deposition methods are supported by the sputtering system?
The system supports DC, RF, and magnetron sputtering — covering a wide array of target materials, from metals to oxides and nitrides. This flexibility allows for thin-film deposition, metallization, dielectric layers, and compound films suitable for semiconductors, optics, sensors, and research devices.
2. What target sizes and configurations are available?
Standard target sizes range from 1″ to 4″, but custom sizes are available upon request. We offer single-, dual-, or multi-cathode configurations to support complex stacks or multi-material depositions.
3. What vacuum levels and working pressures does the system support?
The chamber achieves a base vacuum down to 10-5 – 10-7 Torr (with proper pump configuration). Typical sputtering processes operate at working pressures between 1–20 mTorr, depending on material, target, and process conditions.
4. Can the system handle substrates of different sizes and shapes?
Yes — we support substrates up to standard wafer sizes (e.g. 4″, 6″) and custom substrate fixtures. For non-standard shapes, custom fixtures can be designed. Substrate rotation and optional heating are also available to improve film uniformity and adhesion.
5. Are reactive sputtering and compound films (oxides, nitrides) supported?
Absolutely. Our sputtering system supports reactive gases such as O₂ or N₂, enabling deposition of oxides, nitrides, and compound films. Gas flow control (e.g. via MFC) ensures precise control over stoichiometry and film properties.
6. What post-deposition services or extras do you offer?
We can provide optional post-processing services including annealing, film thickness measurement, inspection, patterning support, and basic film characterization. Custom requests — such as multilayer stacks, substrate cleaning, or pre-treatment — can be discussed case by case.
7. How can customers request a quote or custom configuration?
Simply click the "Request Quote" button on the page, fill in your project requirements (target materials, substrate size, desired film stack, vacuum level, reactive gases, number of samples, etc.), and submit. Our engineering team will review and respond within 24 hours.