Technical Articles & Guides
This article explains how epitaxial wafers are grown on 4H-SiC substrates for power and RF semiconductor devices, covering growth methods, defect control, doping profiles, and practical considerations for device-grade...
4H-SiC substrates and wafers are the foundation of modern wide bandgap power semiconductors, enabling high-voltage, high-temperature, and high-efficiency devices. This article explains 4H-SiC crystal growth, wafer spe...
4H-SiC (4H Silicon Carbide) is a wide bandgap semiconductor widely used in power electronics and high-temperature devices. This article explains 4H-SiC crystal properties, wafer specifications, doping types, and how e...
A technical overview of custom crystal growth methods for research and advanced materials.This guide explains major growth techniques, purity and doping control, crystallographic orientation, defect management, and su...
Custom sapphire rods and tubes are widely used in high-temperature furnaces, CVD systems, optics, plasma reactors, and scientific instruments. This guide explains where to buy custom sapphire components, what machinin...
Custom sapphire components can be drilled, polished, grooved, and machined into complex geometries using diamond grinding and ultrasonic techniques. This guide explains which sapphire shapes are manufacturable, typica...
Custom sapphire components require careful design due to sapphire’s extreme hardness and brittleness. This guide explains achievable machining tolerances, surface finish options, and critical design limits for sapphir...
Sapphire tubes are widely used in high-temperature furnaces, CVD systems, plasma reactors, and optical instruments due to their exceptional strength, thermal stability, and UV–IR transparency. This guide explains how ...