Technical guides and reference articles covering semiconductor materials, single crystals, and wafers used in power electronics, optoelectronics, and advanced device research. Topics include material properties, crystal orientation, doping, wafer specifications, and application-driven material selection.
This article explains how epitaxial wafers are grown on 4H-SiC substrates for power and RF semiconductor devices, covering growth methods, defect control, doping profiles, and practical considerations for device-grade...
4H-SiC substrates and wafers are the foundation of modern wide bandgap power semiconductors, enabling high-voltage, high-temperature, and high-efficiency devices. This article explains 4H-SiC crystal growth, wafer spe...
4H-SiC (4H Silicon Carbide) is a wide bandgap semiconductor widely used in power electronics and high-temperature devices. This article explains 4H-SiC crystal properties, wafer specifications, doping types, and how e...
A technical overview of custom crystal growth methods for research and advanced materials.This guide explains major growth techniques, purity and doping control, crystallographic orientation, defect management, and su...
