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Epitaxial Wafer Growth on 4H-SiC Substrates
This article explains how epitaxial wafers are grown on 4H-SiC substrates for power and RF semiconductor devices, covering growth methods, defect control, doping profiles, and practical considerations for device-grade epitaxy.
Epitaxial Wafer Growth on 4H-SiC Substrates
This article explains how epitaxial wafers are grown on 4H-SiC substrates for power and RF semiconductor devices, covering growth methods, defect control, doping profiles, and practical considerations for device-grade epitaxy.