Custom-Designed Laboratory Furnace

Our custom-built laboratory furnaces are engineered for advanced research environments, including university materials science labs, cleanroom semiconductor facilities, and national laboratories. These furnaces deliver exceptional temperature accuracy and long-term stability, enabling repeatable thermal treatment essential for thin-film deposition, dopant activation, crystal synthesis, device prototyping, and ceramic/oxide material development.

Research institutions benefit from flexible chamber geometries, multi-zone uniformity, and low thermal drift, making the system ideal for method development and academic experiments. Semiconductor fabs can integrate vacuum modules, high-purity gas delivery, and automated temperature profiling for reliable wafer or substrate processing.

With customizable heating zones, programmable controllers, and support for up to 2000°C, our furnaces provide the precision, safety, and reliability required in next-generation materials and device research.

Technical Spec Sheet Table 

Category Specification
Temperature Range 1200°C – 2000°C (depending on heating element)
Heating Elements SiC, MoSi₂, Graphite, Tungsten
Temperature Control PID controller, multi-step ramp/soak, ±1°C stability
Chamber Types Tube (1–3 zone), Box furnace, Vertical/Horizontal
Chamber Size Fully customizable upon request
Atmosphere Options Ambient, inert gas (N₂/Ar), reducing (H₂ mix), oxidizing, vacuum
Vacuum Capability Optional rotary + turbo pump integration
Sensors K-type, S-type or B-type thermocouples
Safety Features Over-temperature cutoff, thermal break protection, insulated housing
Power Requirements Custom per size: 110–240V / 1–3 phase
Applications Crystal growth, annealing, sintering, thin-film processes, ceramics, metallurgy
Optional Add-Ons Gas flow controllers, touchscreen HMI, data logging, water cooling

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Frequently Asked Questions (FAQ)

1. What is the maximum operating temperature of the furnace?

The furnace is designed to reach up to 2000 °C (depending on heating element and configuration). For most standard setups, working temperatures around 1200–1800 °C are stable and reliable.

2. Can you customize the furnace size, chamber, or heating elements?

Yes — we offer full customization. You can specify chamber size, heating element type (e.g. SiC, MoSi₂, graphite, tungsten), heating zones, vacuum compatibility, gas atmosphere, and more. Please fill out the request quote form with your requirements.

3. Do you support vacuum or controlled-atmosphere furnaces?

Absolutely. We can build furnaces compatible with vacuum, inert gas, or controlled-atmosphere environments, suitable for vacuum annealing, material growth, or sensitive processes.

4. What heating element options are available?

We offer multiple heating element types depending on temperature range and application:
• SiC elements (up to ~1600 °C)
• MoSi₂ rods (up to ~1800 °C)
• Graphite or tungsten assemblies (for higher temperatures and inert/vacuum environment)
Select based on your process requirements; contact us if you need advice.

5. What materials or samples can be processed in the furnace?

The furnace is suitable for a wide range of materials and processes, including metals, ceramics, refractories, oxides, glasses, sapphire/quartz components, crystal growth, sintering, annealing, heat treatment — and any R&D-grade materials requiring high temperature or controlled atmosphere.

6. What is the delivery time and production lead time for a custom furnace?

Delivery time depends on the complexity of the furnace and custom requirements. For standard configurations, lead time is typically 4–8 weeks. For fully customized systems (vacuum, large chamber, special materials), lead time will be confirmed after technical discussion.

7. How do I request a quote?

Simply click the "Request a Quote" button at the bottom of this page (or on any product page), fill in your requirements (chamber size, temperature, atmosphere, quantity, drawings), and submit. Our engineer will contact you within 24 hours.