Knowledge
Single-Crystal & Polycrystalline CVD Diamond Wa...
Diamond wafers and substrates (single-crystal and polycrystalline CVD) for thermal management, optics, quantum/NV research, and high-power electronics. Custom thickness and polishing available.
Single-Crystal & Polycrystalline CVD Diamond Wa...
Diamond wafers and substrates (single-crystal and polycrystalline CVD) for thermal management, optics, quantum/NV research, and high-power electronics. Custom thickness and polishing available.
Custom Sapphire Tubes for High-Temperature & Va...
Custom sapphire tubes made from single-crystal Al₂O₃ for high-temperature furnaces, vacuum systems, plasma hardware, and harsh-environment instruments. Flexible OD/ID/length, end machining, and optional polishing.
Custom Sapphire Tubes for High-Temperature & Va...
Custom sapphire tubes made from single-crystal Al₂O₃ for high-temperature furnaces, vacuum systems, plasma hardware, and harsh-environment instruments. Flexible OD/ID/length, end machining, and optional polishing.
Semiconductor Doping & Ion Implantation Services
Semiconductor doping services including ion implantation, diffusion, and activation anneal for Si, SiC, and selected wide-bandgap materials. RFQ support with optional electrical characterization.
Semiconductor Doping & Ion Implantation Services
Semiconductor doping services including ion implantation, diffusion, and activation anneal for Si, SiC, and selected wide-bandgap materials. RFQ support with optional electrical characterization.
Diamond-on-SiC Services for Ultra-High-Power & ...
Diamond-on-SiC combines CVD diamond heat-spreading layers with silicon carbide substrates to enable ultra-high-power RF, microwave, and thermal-management-limited electronic devices.
Diamond-on-SiC Services for Ultra-High-Power & ...
Diamond-on-SiC combines CVD diamond heat-spreading layers with silicon carbide substrates to enable ultra-high-power RF, microwave, and thermal-management-limited electronic devices.
AlN-on-SiC Services for RF, Microwave & Harsh-E...
AlN-on-SiC combines aluminum nitride epitaxy with silicon carbide substrates to enable high-frequency, high-temperature RF and harsh-environment electronic devices.
AlN-on-SiC Services for RF, Microwave & Harsh-E...
AlN-on-SiC combines aluminum nitride epitaxy with silicon carbide substrates to enable high-frequency, high-temperature RF and harsh-environment electronic devices.
GaN-on-SiC Services for RF, Microwave & Power D...
GaN-on-SiC services for RF, microwave, and power devices, delivering high performance, excellent thermal management, and flexible wafer specifications for R&D and OEM needs.
GaN-on-SiC Services for RF, Microwave & Power D...
GaN-on-SiC services for RF, microwave, and power devices, delivering high performance, excellent thermal management, and flexible wafer specifications for R&D and OEM needs.