Diamond-on-SiC Technology & Services
Diamond-on-SiC combines a CVD diamond layer with a silicon carbide (SiC) substrate to create an advanced material platform for extreme power density, RF, microwave, and thermal-management-limited electronics. Diamond provides the highest known thermal conductivity, while SiC offers mechanical strength, electrical isolation options, and compatibility with wide-bandgap devices.
This hybrid platform is increasingly used where heat removal, reliability, and high-power operation dominate system requirements.
Why Diamond-on-SiC?
Key advantages include:
- Ultra-high thermal conductivity (diamond layer) for rapid heat spreading
- High mechanical strength and thermal stability (SiC substrate)
- Reduced junction temperature for high-power RF and power devices
- Improved reliability and lifetime under extreme operating conditions
- Compatibility with GaN, SiC, and advanced RF device architectures
Diamond-on-SiC is primarily selected when thermal limits, not electrical limits, constrain device performance.
Diamond-on-SiC Service Capabilities
- CVD diamond deposition on 4H-SiC substrates
- Custom diamond thickness for optimized heat spreading
- Semi-insulating or conductive SiC substrate options
- Wafer-level or die-level solutions (application dependent)
- Support for R&D, prototyping, and specialty OEM development
Typical Applications
- High-power RF and microwave devices
- GaN-based RF power amplifiers with advanced heat spreading
- mmWave and defense electronics
- High-power power electronics modules
- Aerospace, space, and harsh-environment systems
