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6“ Silicon Carbide (4H-SiC) Wafers or epitaxial layer growth
6“ Silicon Carbide (4H-SiC) Wafers or epitaxial layer growth
Regular price
$520.00 USD
Regular price
Sale price
$520.00 USD
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This listing features 4H-SiC wafers, perfect for use in electrical equipment and supplies. These wafers are made from high-quality silicon carbide, ensuring durability and long-lasting use. The wafers are suitable for a variety of applications, including business and industrial settings. Whether you're looking to upgrade your equipment or simply need to replace a worn-out piece, these 6" Silicon Carbide Wafers 4H-SiC are an excellent choice.
Properties:
| Conduction Type | N-type |
| Poly Type | 4H |
| Class | P-MOS |
| Diameter(mm) | 150±0.25mm |
| Thickness(um) | 350um±25um |
| Orientation<11-20> | 4±0.5°off toward <11-20> |
| Primary Flat Position (degree) | <1120>±3° |
| Primary Flat Length(mm) | 47.5mm±2.5mm |
| Dopant | N-type Nitrogen |
| Resistivity（Ω•cm） | 0.015-0.025 |
| MPD(per cm²) | ≤0.1/cm2 |
| Surface Process(Si face) | CMP, <0.2 nm |
| Surface scratch | Total Length≤7.5cm |
| LTV(um) | ≤ 2um（10*10mm） |
| TTV(um) | ≤5um |
| Warp(3P)(um) | ≤20um |
| Bow(3P)(um) | ≤15um |
| TSD Defect | ≤200ea/cm2 |
| BPD Defect | ≤500ea/cm2 |
| EPD Defect | ≤2700ea/cm2 |
We also provide epitaxial layer growth services. If you require this advanced capability (SiC or GaN), please feel free to contact us (support@design-realized.com).
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