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4H-SiC (Silicon Carbide) Substrate / Wafer

4H-SiC (Silicon Carbide) Substrate / Wafer

$520.00 USD
$520.00 USD
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4H-SiC (Silicon Carbide) single crystal substrates and wafers are industry-standard materials for next-generation wide-bandgap power electronics. With a bandgap of approximately 3.26 eV, high thermal conductivity, and an exceptionally high critical electric field, 4H-SiC enables high-voltage, high-power, and high-frequency devices that outperform conventional silicon technologies.

Compared with silicon, 4H-SiC offers significantly higher breakdown voltage, lower on-state losses, and superior thermal stability, making it ideal for power devices operating in harsh environments and at elevated temperatures. Its hexagonal polytype structure provides excellent electron mobility along the c-axis, which is why 4H-SiC is the preferred polytype for MOSFETs, Schottky diodes, JFETs, and RF power devices.

Our 4H-SiC substrates are produced with strict control of crystal quality, micropipe density, and surface morphology, ensuring reliable epitaxial growth and device fabrication. Precision polishing delivers low surface roughness and high flatness, compatible with advanced epitaxy techniques such as CVD and MBE.

Multiple wafer diameters, doping types, and orientations are available to support both academic research and commercial semiconductor manufacturing. Custom specifications, including thickness, resistivity, and surface finish, can be provided upon request.

Key Features & Properties

  • Polytype: 4H-SiC
  • Wide bandgap: ~3.26 eV
  • High breakdown electric field
  • Excellent thermal conductivity
  • High electron mobility along c-axis
  • Low defect density and smooth surface finish
  • Suitable for high-temperature and high-power operation

Typical Applications

  • Power MOSFETs and Schottky barrier diodes
  • High-voltage and high-efficiency power modules
  • Electric vehicles (EV) and fast-charging systems
  • Renewable energy and smart grid inverters
  • RF and microwave power devices
  • Aerospace and harsh-environment electronics

Properties:

Conduction Type N-type
Poly Type 4H
Class P-MOS
Diameter(mm) 150±0.25mm
Thickness(um) 350um±25um
Orientation<11-20> 4±0.5°off toward <11-20>
Primary Flat Position (degree) <1120>±3°
Primary Flat Length(mm) 47.5mm±2.5mm
Dopant N-type Nitrogen
Resistivity（Ω•cm） 0.015-0.025
MPD(per cm²)    ≤0.1/cm2          
Surface Process(Si face) CMP, <0.2 nm
Surface scratch Total Length≤7.5cm  
LTV(um) ≤  2um（10*10mm）
TTV(um) ≤5um
Warp(3P)(um) ≤20um 
Bow(3P)(um) ≤15um
TSD Defect ≤200ea/cm2
BPD Defect ≤500ea/cm2
EPD Defect ≤2700ea/cm2

Frequently Asked Questions — 4H-SiC Substrates & Wafers

What is 4H-SiC and why is it widely used?
4H-SiC (Silicon Carbide) is the most widely adopted polytype for wide-bandgap power semiconductor devices. It offers a wide bandgap (~3.26 eV), high breakdown electric field, excellent thermal conductivity, and superior performance at high voltage, high power, and high temperature compared to silicon.
How does 4H-SiC compare with silicon?
Compared with silicon, 4H-SiC provides much higher breakdown voltage, lower on-state losses, higher switching speed, and better thermal stability. This enables smaller, more efficient, and more reliable power systems, especially in EVs and renewable energy applications.
Why is 4H-SiC preferred over other SiC polytypes?
4H-SiC offers higher electron mobility along the c-axis than other SiC polytypes, making it the preferred choice for power MOSFETs, Schottky diodes, JFETs, and RF power devices.
What wafer sizes, doping, and orientations are available?
Multiple wafer diameters, n-type nitrogen doping levels, and standard off-axis orientations are available. Thickness, resistivity, and crystallographic orientation can be customized to meet device and epitaxy requirements.
What surface quality can be achieved?
Wafers are supplied with CMP-polished Si-face surfaces, low roughness (<0.2 nm typical), high flatness, and controlled TTV/LTV, making them suitable for advanced epitaxial growth and device fabrication.
Are these wafers suitable for epitaxial growth?
Yes. Our 4H-SiC substrates are optimized for CVD and MBE epitaxy, with controlled defect density and surface morphology to support high-quality device-grade epitaxial layers.
What applications commonly use 4H-SiC wafers?
Power MOSFETs and diodes, EV traction inverters, fast-charging systems, renewable energy inverters, RF and microwave power devices, and aerospace or harsh-environment electronics.
Do you provide epitaxial layer growth services?
Yes. We also provide SiC and GaN epitaxial layer growth services. Please contact us with your device structure and specifications for technical evaluation.
Are these wafers suitable for both research and mass production?
Absolutely. Our 4H-SiC wafers are supplied to universities, research institutes, and commercial semiconductor manufacturers for both R&D and production-level applications.

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