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4-6“ Silicon Carbide (4H-SiC) Wafers or epitaxial layer growth
4-6“ Silicon Carbide (4H-SiC) Wafers or epitaxial layer growth
Regular price
$520.00 USD
Regular price
Sale price
$520.00 USD
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This listing features 4H-SiC wafers, perfect for use in electrical equipment and supplies. These wafers are made from high-quality silicon carbide, ensuring durability and long-lasting use. The wafers are suitable for a variety of applications, including business and industrial settings. Whether you're looking to upgrade your equipment or simply need to replace a worn-out piece, these 4 or 6" Silicon Carbide Wafers 4H-SiC are an excellent choice.
We also provide epitaxial layer growth services. If you require this advanced capability (SiC or GaN), please feel free to contact us.
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