AlN-on-SiC Epitaxy & Wafer Services
AlN-on-SiC (Aluminum Nitride on Silicon Carbide) is an advanced wide-bandgap material platform designed for extreme RF, microwave, and high-temperature electronic applications. By combining AlN’s ultra-wide bandgap and high acoustic velocity with SiC’s exceptional thermal conductivity and mechanical robustness, AlN-on-SiC enables devices that operate under high power, high frequency, and harsh environmental conditions.
We provide AlN-on-SiC services supporting research, prototyping, and specialized OEM development, with flexible specifications to match demanding device requirements.
Why AlN-on-SiC?
Key advantages of AlN-on-SiC include:
- Ultra-wide bandgap (AlN) enabling extreme electric-field operation
- High thermal conductivity (SiC substrate) for efficient heat removal
- Excellent piezoelectric properties for RF and acoustic devices
- High temperature and chemical stability
- Low RF loss and high acoustic velocity
This platform is particularly attractive for high-frequency RF components, acoustic devices, and harsh-environment electronics.
AlN-on-SiC Service Capabilities
- AlN epitaxial growth on 4H-SiC substrates
- Semi-insulating SiC substrates for RF isolation
- Custom wafer diameter, thickness, and orientation
- Structures suitable for RF electronics, acoustic resonators, and advanced device research
- Support for R&D, pilot fabrication, and specialty production
Typical Applications
- RF and microwave electronics
- mmWave and high-frequency signal devices
- Surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices
- High-temperature and harsh-environment electronics
- Aerospace, defense, and space systems
