4H-SiC for RF, Microwave, and mmWave Electronics
4H-SiC (4H Silicon Carbide) is a wide-bandgap semiconductor material widely used in RF, microwave, and millimeter-wave (mmWave) electronics where high power density, high breakdown voltage, and superior thermal management are required. These properties make 4H-SiC a key material platform for high-frequency power devices operating in demanding or harsh environments.
Compared with conventional silicon, 4H-SiC enables higher operating voltages, higher junction temperatures, and improved long-term reliability, which are critical for RF power amplification and high-frequency switching applications.
Key RF & High-Frequency Advantages of 4H-SiC
- Wide bandgap enabling high electric-field operation
- High critical breakdown field for compact, high-power RF devices
- High thermal conductivity for efficient heat dissipation
- High electron saturation velocity supporting microwave and mmWave operation
- Excellent thermal and chemical stability
RF & Microwave Applications
4H-SiC is commonly used in:
- RF power transistors and switching devices
- Microwave power amplifiers (L-band to X-band)
- High-power RF front-end electronics
- Radar transmitters and receivers
- Satellite and aerospace RF systems
These applications benefit from stable performance at high power and high duty cycles, even under elevated temperature conditions.
mmWave & Advanced RF Systems
At higher frequencies, 4H-SiC supports:
- mmWave power electronics
- High-voltage RF stages for advanced communication systems
- Substrate and thermal platforms for wide-bandgap RF devices
While GaN is often used as the active RF layer, 4H-SiC plays a critical role as a substrate and power-handling platform due to its thermal and mechanical robustness.
Harsh-Environment RF Electronics
4H-SiC RF components are well suited for:
- High-temperature RF electronics
- Radiation-tolerant systems
- Defense, aerospace, and space applications
- Industrial and energy-sector RF systems
