We provide GaN-on-SiC services tailored for RF, microwave, mmWave, and high-power electronic applications. GaN-on-SiC combines the high electron mobility and wide bandgap of GaN with the excellent thermal conductivity and mechanical robustness of SiC substrates, enabling high-performance devices operating at high power density and high frequency.
Our services support research, prototyping, and OEM production, with flexible specifications to match your device design and process requirements.
Why GaN-on-SiC?
GaN-on-SiC is widely adopted for advanced RF and power electronics because it offers:
- High output power and efficiency
- Excellent thermal dissipation through the SiC substrate
- High breakdown voltage and high-frequency capability
- Stable operation under high power and high duty cycles
This material platform is a foundation for state-of-the-art RF power amplifiers and microwave devices.
GaN-on-SiC Service Capabilities
- GaN epitaxy on 4H-SiC substrates
- Semi-insulating SiC substrates for RF applications
- Custom wafer diameter, thickness, and orientation
- Structures suitable for HEMT and RF power device fabrication
- Support for R&D, pilot runs, and volume production
Typical Applications
- RF and microwave power amplifiers
- mmWave and advanced communication systems
- Radar and defense electronics
- Satellite and aerospace RF payloads
- High-power and high-frequency electronic devices
Integration & Device Development
GaN-on-SiC wafers produced through our service are suitable for:
- RF HEMT device fabrication
- High-power switching and amplification stages
- Custom device architectures requiring efficient thermal management
Specifications can be adjusted based on target frequency range, power level, and thermal constraints.
FAQ — GaN-on-SiC Services
Why choose GaN-on-SiC instead of GaN-on-Si?
GaN-on-SiC offers significantly better thermal conductivity than GaN-on-Si, enabling higher power density, improved heat dissipation, and better reliability. This makes GaN-on-SiC the preferred platform for RF, microwave, and high-power devices, especially at high frequencies and high duty cycles.
What applications benefit most from GaN-on-SiC?
GaN-on-SiC is widely used in RF power amplifiers, microwave and mmWave devices, radar systems, satellite communications, and other high-power or harsh-environment electronics.
Is GaN-on-SiC necessary for low-power RF applications?
Not always. For low-power or cost-sensitive RF applications, GaN-on-Si may be sufficient. GaN-on-SiC is recommended when high output power, high efficiency, or thermal robustness is required.
Does GaN-on-SiC improve device reliability?
Yes. The superior thermal conductivity and mechanical stability of SiC substrates help reduce junction temperature, improving device lifetime and long-term reliability, particularly under high-power operation.
What wafer types are commonly used for GaN-on-SiC?
Semi-insulating 4H-SiC substrates are commonly used for RF and microwave GaN-on-SiC devices, providing electrical isolation and excellent thermal performance.
Can GaN-on-SiC be customized for specific device designs?
Yes. GaN-on-SiC services can support custom wafer diameters, thicknesses, orientations, and epitaxial structures depending on your RF device architecture and application needs.
