1 1

My Store

GaN (Gallium Nitride) Substrate / Wafer

GaN (Gallium Nitride) Substrate / Wafer

$100.00 USD
$100.00 USD
Sale Sold out
📄 Request a Quote

GaN (Gallium Nitride) Substrates and Wafers

GaN (Gallium Nitride) is a wide-bandgap III–V semiconductor material widely used in power electronics, RF and microwave devices, LEDs, laser diodes, and advanced optoelectronic systems. With a wide bandgap of approximately 3.4 eV, GaN enables devices with high breakdown voltage, high switching speed, and excellent thermal stability.

Compared with silicon and GaAs, GaN offers much higher critical electric field, higher power density, and superior high-frequency performance. These advantages make GaN the material of choice for HEMTs, RF power amplifiers, fast chargers, EV power modules, and high-brightness optoelectronic devices.

Native GaN substrates provide excellent lattice matching for homoepitaxial GaN growth, resulting in significantly lower dislocation density compared with heteroepitaxial GaN grown on sapphire or silicon. This leads to improved device efficiency, reliability, and lifetime.

Our GaN wafers are supplied with strict control of crystal orientation, surface flatness, thickness uniformity, and defect density. Epi-ready polishing is available for MOCVD, MBE, and HVPE epitaxial growth, supporting both research and commercial manufacturing.

Key Features

  • Wide bandgap semiconductor (Eg ≈ 3.4 eV)
  • Very high breakdown electric field
  • High electron mobility and saturation velocity
  • Excellent thermal and chemical stability
  • Low dislocation density (native GaN)
  • Optimized for homoepitaxial growth

Typical Applications

  • Power electronics and vertical GaN devices
  • RF and microwave HEMTs
  • High-efficiency power amplifiers
  • Blue and UV laser diodes
  • High-brightness LEDs
  • Advanced optoelectronic and photonic devices

Typical Properties

  • Material: Gallium Nitride (GaN)
  • Crystal Structure: Wurtzite
  • Bandgap: ~3.4 eV
  • Orientation: (0001), (10-10), (11-20)
  • Conductivity: Undoped, n-type
  • Surface: Epi-ready, single-side or double-side polished

Frequently Asked Questions — GaN Substrate / Wafer

GaN substrates are used for power electronics, RF and microwave devices, LEDs, laser diodes, and advanced optoelectronic systems where high power, high frequency, and high efficiency are required.
Compared with silicon, GaN offers much higher breakdown voltage and power density. Compared with GaAs, GaN provides superior high-power and high-temperature performance.
Native GaN substrates enable homoepitaxial growth with significantly lower dislocation density than GaN-on-sapphire or GaN-on-silicon, resulting in higher device reliability and performance.
Yes. Our GaN wafers are epi-ready and compatible with MOCVD, MBE, and HVPE epitaxial growth techniques.
Yes. Custom wafer sizes, orientations, thicknesses, and surface finishes are available upon request.

 

View full details