One-Stop Prototyping Semiconductor Device Fabrication Service

Design-Realized offers a complete vertically integrated R&D fabrication service for research teams who need custom, small-batch semiconductor devices without the cost or complexity of a commercial foundry.

Our service covers the entire development chain:

• Substrates & single crystals
• Photomasks & shadow masks
• Thin-film deposition (PVD, sputtering, e-beam)
• Microfabrication and patterning
• Packaging and bonding
• Electrical, optical, and material testing
• Custom fixtures, vacuum components, holders
• Device-level prototyping

This workflow dramatically reduces lead time, cost, and communication overhead for R&D laboratories.

SECTION A — Why Choose a One-Stop Semiconductor Prototyping Service?

✔ Accepts non-standard, one-piece, and small-batch orders

Foundries reject anything below thousands of wafers.
We specialize in research-scale manufacturing.

✔ Full vertical integration

We directly supply:

• Custom single-crystal substrates (sapphire, quartz, Ga₂O₃, ZnO, YAG, etc.)
• Photomasks & high-precision shadow masks
• Metal/oxide/nitride thin films
• Custom PVD sputtering fixtures and holders
• High-temperature furnaces up to 2000 °C
• Vacuum chambers / flanges / feedthroughs
• CNC + 3D printed jigs for alignment and packaging
• Scintillator materials and optical components
• Custom analytical tools (LIBS/XRF small instruments)

✔ Fast turnaround for research deadlines

• Masks: 2–4 days
• Thin films: 2–5 days
• Precision machining: 2–3 days
• Crystal processing: 1–3 weeks
• Full device prototype: 2–4 weeks

✔ Lower cost than semiconductor foundries

Optimized for university and national lab budgets.

SECTION B — Full Prototyping Workflow

Step 1 — Substrate & Crystal Preparation

We can supply or process:

• Sapphire (A-plane, C-plane, R-plane)
• Quartz (X/Y/Z cut)
• Ga₂O₃, ZnO, CdZnTe wafers
• Perovskite single crystals
• YAG, LYSO, GAGG:Ce and other functional crystals

Capabilities:

• Thickness tolerance: ±0.02 mm
• Orientation accuracy: ±0.1–0.5°
• CMP and optical polishing
• Flatness and parallelism control

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Step 2 — Photomask & Shadow Mask Fabrication

Photomasks (for lithography)

• Chrome on glass/quartz
• Resolution: 1–5 μm
• Multi-layer mask sets supported

Shadow Masks (for direct metal patterning)

• Stainless steel 0.05–0.5 mm

• Laser-cut features down to 20–30 μm

• Custom mask frames and alignment rings available

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Step 3 — Thin-Film Deposition (PVD / Sputtering / E-Beam)

Metals

Au, Pt, Ti, Cr, Al, Ni, Cu, Mo, W

Oxides / Nitrides

Al₂O₃, SiO₂, Si₃N₄, ITO, ZnO, Ga₂O₃ (partial)

Capabilities

• Film thickness: 5 nm – 5 μm
• Multilayer stacks (Ti/Au, ITO/SiO₂, etc.)
• Thickness uniformity: ±5%
• Shadow-mask or lithographic patterning

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Step 4 — Microfabrication & Patterning

Shadow-mask patterning

The fastest route for R&D prototyping—no wet chemistry required.

Photolithography (outsourced or in-house simplified)

• Positive/negative resist
• Single or multi-layer structures

Etching

Dry etching (RIE) available via partner facilities.

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Step 5 — Device Packaging & Assembly

• Wire bonding (Au/Al wedge bonding)
• Ceramic, metal TO-packages, or open-die
• PCB mounting
• Scintillator + SiPM optical coupling
• Epoxy bonding, alignment jigs
• Custom 3D-printed or CNC carriers

 

SECTION C — Supported Semiconductor Device Types

We can fabricate research prototypes such as:

✔ UV / Visible Photodetectors

(Ga₂O₃, ZnO, sapphire-based MSM devices)

✔ Radiation Detectors

• Scintillator + SiPM modules
• PIN diodes with metal contacts

✔ Micro-LED Pilot Devices

• Electrode patterns
• Isolation structures

✔ MEMS Prototypes

• Micro-heaters
• Microchannels
• Sensor elements

✔ Thin-Film Electronic Structures

• Interdigitated electrodes (IDE)
• Thin-film capacitors
• Transparent electrode devices

SECTION D — What Researchers Should Prepare Before Starting

✔ 1. Device drawing or CAD

DXF / GDSII / Gerber / PDF / Sketch acceptable.
We can convert hand sketches into full CAD fabrication files.

✔ 2. Substrate choice

Sapphire, quartz, Ga₂O₃, ZnO, YAG, LYSO, etc.

✔ 3. Thin-film stack

Example:
Ti (10 nm) / Au (100 nm)
ITO (80 nm) / Al₂O₃ (50 nm)

✔ 4. Minimum feature size

Define:

• Smallest line width
• Alignment requirement
• Via/contact opening size

✔ 5. Packaging preference

Bare die / wire-bonded / PCB mounted / detector module.

SECTION E — Why Research Teams Choose Our Service

• End-to-end fabrication reduces technical communication overhead.
• Fast turnaround enables rapid iteration.
• Flexible, custom, and low-volume manufacturing.
• Consistent quality because all steps are controlled within one workflow.
• Ideal for material discovery and early-stage device R&D.