Ga2O3 substrate/wafer (10mmx10mm x0.5mm)

Ga₂O₃ (Gallium Oxide) substrates/wafers are cutting-edge materials enabling next-generation power semiconductor and deep-ultraviolet (DUV) applications. With an ultra-wide bandgap of approximately 4.9 eV, Ga₂O₃ offers exceptional breakdown voltage, thermal stability, and energy efficiency—outperforming traditional semiconductor materials.

Engineered for superior crystal quality and low defect density, these wafers are ideal for developing high-efficiency power devices, solar-blind photodetectors, and advanced RF components. Multiple crystal orientations and customizable specifications are available to meet both research and commercial production requirements.

Key Properties:

• Orientation: (100)

• Dopant Options: Sn (>1×10¹⁸ cm⁻³), Fe (>1×10¹⁰ Ω·cm)

• Surface Roughness (Ra): <0.5 nm

• Available Sizes: Standard and large formats

For inquiries or custom specifications, please contact us at support@design-realized.com