• Ga2O3 substrate
  • Ga2O3 substrate
  • 2 inch Ga2O3 wafer
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Ga2O3 Substrates & Wafers for Ultra-Wide Bandgap Devices

Ga2O3 Substrates & Wafers for Ultra-Wide Bandgap Devices

$100.00 USD
$100.00 USD
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Ga₂O₃ (Gallium Oxide) substrates/wafers are cutting-edge materials enabling next-generation power semiconductor and deep-ultraviolet (DUV) applications. With an ultra-wide bandgap of approximately 4.9 eV, Ga₂O₃ offers exceptional breakdown voltage, thermal stability, and energy efficiency—outperforming traditional semiconductor materials.

Engineered for superior crystal quality and low defect density, these wafers are ideal for developing high-efficiency power devices, solar-blind photodetectors, and advanced RF components. Multiple crystal orientations and customizable specifications are available to meet both research and commercial production requirements.

Key Properties:

  • Orientation: (100) (001), (010), (201)
  • Dopant Options: Sn (>1×10¹⁸ cm⁻³), Fe (>1×10¹⁰ Ω·cm)
  • Surface Roughness (Ra): <0.5 nm
  • Available Sizes: Standard and large formats

Contact us ( provide applications or exacatly requirements such as polished sides(single or double), orientation). Thank you

Frequently Asked Questions — Ga₂O₃ Substrates / Wafers

What is Ga₂O₃ and why is it important?
Gallium Oxide (Ga₂O₃), particularly β-Ga₂O₃, is an ultra-wide bandgap semiconductor (~4.9 eV) that enables next-generation power electronics and deep-ultraviolet (DUV) optoelectronic devices. Its high breakdown electric field allows higher voltage operation with improved efficiency.
How does Ga₂O₃ compare with SiC and GaN?
Compared with SiC and GaN, Ga₂O₃ offers a significantly higher theoretical breakdown field, enabling ultra-high-voltage devices. While its thermal conductivity is lower, Ga₂O₃ is attractive for cost-effective, high-voltage, and research-stage power and DUV applications.
What crystal orientation do you provide?
Standard orientation is (100). Other orientations may be available upon request depending on crystal availability and application needs.
What dopant options are available?
We offer Sn-doped conductive Ga₂O₃ (>1×10¹⁸ cm⁻³) for power electronics and Fe-doped semi-insulating Ga₂O₃ (>1×10¹⁰ Ω·cm) for RF and photodetector applications.
What surface quality and roughness can be achieved?
Ga₂O₃ wafers are supplied with epi-ready, single-side or double-side polishing. Typical surface roughness is Ra < 0.5 nm, suitable for epitaxial growth and device fabrication.
What wafer sizes and thicknesses are available?
Standard research sizes as well as larger-format wafers are available. Thickness, diameter, and edge finishing can be customized based on your process requirements.
What applications commonly use Ga₂O₃ substrates?
Ultra-high-voltage power devices, Schottky and MOSFET development, solar-blind DUV photodetectors, RF research, and advanced semiconductor R&D.
Are Ga₂O₃ wafers suitable for research and commercial development?
Yes. Ga₂O₃ substrates are widely used by universities, national laboratories, and industrial R&D teams for both exploratory research and pilot device development.

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