Knowledge

Diamond-on-SiC Services for Ultra-High-Power & ...

Diamond-on-SiC combines CVD diamond heat-spreading layers with silicon carbide substrates to enable ultra-high-power RF, microwave, and thermal-management-limited electronic devices.

AlN-on-SiC Services for RF, Microwave & Harsh-E...

AlN-on-SiC combines aluminum nitride epitaxy with silicon carbide substrates to enable high-frequency, high-temperature RF and harsh-environment electronic devices.

GaN-on-SiC Services for RF, Microwave & Power D...

GaN-on-SiC services for RF, microwave, and power devices, delivering high performance, excellent thermal management, and flexible wafer specifications for R&D and OEM needs.

4H-SiC for RF, Microwave, and mmWave Electronics

4H-SiC (4H Silicon Carbide) is widely used in RF, microwave, and mmWave electronics for high-power, high-frequency applications requiring excellent thermal performance and reliability.

Custom LaBr₃:Ce Single-Crystal Scintillator

Custom LaBr₃:Ce Single-Crystal Scintillators We provide custom-designed LaBr₃:Ce (Lanthanum Bromide, Cerium-doped) single-crystal scintillators tailored to your application requirements. LaBr₃:Ce is a high-performance gamma-ray scintillator known for its high light yield,...

LaBr₃:Ce Scintillator Crystal (Encapsulated) — ...

LaBr₃:Ce (Cerium-doped Lanthanum Bromide) is a premium gamma-ray scintillator known for excellent energy resolution, very high light output, and fast decay time—ideal for gamma spectroscopy where peak separation and counting...