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Single Crystal Gallium Nitride for Advanced Semiconductor Devices

Single Crystal Gallium Nitride for Advanced Semiconductor Devices

$100.00 USD
$100.00 USD
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GaN (Gallium Nitride) substrates and wafers are high-performance semiconductor materials widely used in power electronics, RF and microwave devices, LEDs, laser diodes, and advanced optoelectronic systems. As a wide-bandgap semiconductor with a bandgap of approximately 3.4 eV, GaN enables devices with high breakdown voltage, high electron mobility, high switching speed, and excellent thermal stability.

Compared with hetero-epitaxial GaN grown on sapphire or silicon, native GaN substrates offer significantly lower dislocation density, improved crystal quality, and superior device reliability. These advantages are critical for high-power, high-frequency, and high-efficiency devices, including GaN HEMTs, vertical power devices, and high-brightness laser diodes.

GaN wafers provide excellent lattice matching for homoepitaxial growth, enabling precise control of epitaxial layers and device structures. This results in higher yield, improved performance uniformity, and longer device lifetime, making GaN substrates the material of choice for next-generation semiconductor technologies.

Our GaN substrates are supplied with strict control of orientation, surface flatness, thickness uniformity, and defect density. Precision polishing ensures ultra-smooth surfaces suitable for MOCVD, MBE, and HVPE epitaxy. Multiple orientations, doping types, and wafer sizes are available to support both academic research and commercial device manufacturing.

Key Features & Properties

  • Material: Single crystal Gallium Nitride (GaN)
  • Wide bandgap: ~3.4 eV
  • High breakdown electric field
  • High electron mobility and saturation velocity
  • Low dislocation density (native GaN)
  • Excellent thermal and chemical stability
  • Optimized for homoepitaxial growth

Typical Applications

  • Power electronics and vertical GaN devices
  • RF and microwave HEMTs
  • High-brightness LEDs
  • Blue and UV laser diodes
  • High-frequency and high-efficiency electronics
  • Advanced optoelectronic and photonic devices

Custom wafer sizes, orientations, surface finishes, and doping options are available upon request.

Frequently Asked Questions — GaN Substrates & Wafers

What is a GaN substrate or wafer?
A GaN substrate is a single-crystal gallium nitride wafer used as a base material for homoepitaxial GaN growth. Compared with GaN grown on sapphire or silicon, native GaN substrates offer much lower dislocation density and superior crystal quality.
Why choose native GaN instead of GaN-on-sapphire or GaN-on-Si?
Native GaN substrates provide significantly lower threading dislocation density, better lattice matching, improved thermal stability, and higher device reliability. These advantages are critical for high-power, high-frequency, and long-lifetime devices.
What applications benefit most from GaN substrates?
GaN substrates are widely used in vertical power devices, RF and microwave HEMTs, high-brightness LEDs, blue/UV laser diodes, and advanced optoelectronic systems, where performance and reliability are critical.
What epitaxy techniques are compatible with GaN wafers?
GaN substrates are optimized for MOCVD, MBE, and HVPE homoepitaxial growth. The excellent lattice matching enables precise control of epitaxial layers, higher yield, and improved device uniformity.
What crystal orientations are available?
Common orientations include c-plane (0001), with additional orientations available upon request depending on device structure and epitaxial requirements.
What surface quality and polishing are provided?
GaN wafers are supplied with precision polishing, high flatness, and ultra-smooth surface roughness, suitable for advanced epitaxy and microfabrication processes.
Are different doping types available?
Yes. GaN substrates can be supplied with various doping types to support specific device designs, including power electronics and RF applications. Please contact us with your requirements.
What wafer sizes are supported?
Multiple wafer sizes are available for research-scale and commercial production. Custom diameters, thicknesses, and specifications can be provided upon request.
Are GaN substrates suitable for research and mass production?
Yes. Our GaN wafers are supplied to universities, research laboratories, and semiconductor manufacturers, supporting both prototype development and commercial device fabrication.
Can custom specifications be supported?
Absolutely. We support custom wafer sizes, orientations, surface finishes, and doping options. Technical consultation is available to ensure compatibility with your device process.
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